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APT5020SLC View Datasheet(PDF) - Advanced Power Technology

Part NameAPT5020SLC APT
Advanced Power Technology  APT
DescriptionPOWER MOS VI™ 500V 26A 0.200Ω


APT5020SLC Datasheet PDF : 2 Pages
1 2
APT5020BLC
APT5020SLC
500V 26A 0.200W
POWER MOS VITM
BLC
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize Ciss and Crss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
TO-247
D3PAK
SLC
• Identical Specifications: TO-247 or Surface Mount D3PAK Package
D
• Lower Gate Charge & Capacitance
• 100% Avalanche Tested
• Easier To Drive
• Faster switching
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
AL Continuous Drain Current @ TC = 25°C
IC Pulsed Drain Current 1
N Gate-Source Voltage Continuous
CH Gate-Source Voltage Transient
TE N Total Power Dissipation @ TC = 25°C
D IO Linear Derating Factor
E T Operating and Storage Junction Temperature Range
NC MA Lead Temperature: 0.063" from Case for 10 Sec.
A R Avalanche Current 1 (Repetitive and Non-Repetitive)
DV FO Repetitive Avalanche Energy 1
A IN Single Pulse Avalanche Energy 4
APT5020
500
26
104
±30
±40
300
2.4
-55 to 150
300
26
30
1300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
26
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
0.20
25
250
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Amps
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
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Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
Lower gate charge coupled with Power MOS VI™ optimized gate layout, delivers exceptionally fast switching speeds.

• Identical Specifications: TO-247 or Surface Mount D3PAK Package
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching

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