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OM6503ST View Datasheet(PDF) - Omnirel Corp => IRF

Part NameOM6503ST Omnirel
Omnirel Corp => IRF Omnirel
DescriptionINSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE


OM6503ST Datasheet PDF : 2 Pages
1 2
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-257AA PACKAGE
OM6501ST
OM6502ST
500 Volt, 5 And 10 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
V(BR)CES
VCE (sat) (Typ.)
Tf (Typ.)
qJC
PD
TJ
NUMBER @ 90°C, A
V
V
ns
°C/W
W
°C
OM6501ST
5
500
2.8
400
3.8
35
150
OM6502ST
10
500
2.8
400
3.0
42
150
SCHEMATIC MECHANICAL OUTLINE PACKAGE OPTIONS
Collector
Gate
Emitter
.200
.420
.190
.410
.045
.035
.665
.150
.645
.140
.537
1 2 3 .527
.430
C EG
.410
.038 MAX.
.750
.500
.005
MOD PAK
.035
.100 TYP.
.025
.120 TYP.
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
6 PIN SIP
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 139
3.1
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500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package

DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.

FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels

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