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IXTP02N50D View Datasheet(PDF) - IXYS CORPORATION

Part NameIXTP02N50D IXYS
IXYS CORPORATION IXYS
DescriptionHigh Voltage MOSFET N-Channel, Depletion Mode
IXTP02N50D Datasheet PDF : 2 Pages
1 2
High Voltage MOSFET IXTP 02N50D
IXTU 02N50D
N-Channel, Depletion Mode
IXTY 02N50D
Preliminary Data Sheet
VDSS =
ID25 =
= RDS(on)
500 V
200 mA
30 Ω
Symbol
VDSX
VDGX
VGS
VGSM
IDSS
IDM
PD
TJ
TJM
Tstg
TL
TISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C; TJ = 25°C to 150°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TA = 25°C
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
Mounting torque
TO-220
TO-220
TO-251
TO-252
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSX
VGS(off)
VGS = -10 V, ID = 25 μA
VDS = 25V, ID = 25 μA
IGSS
VGS = ± 20 VDC, VDS = 0
IDSX(off)
VDS = VDSS, VGS = -10 V
TJ = 125°C
RDS(on)
VGS = 0 V, ID = 50 mA Note 1
ID(on)
VGS = 0 V, VDS = 25V Note 1
Maximum Ratings
500
500
± 20
± 30
200
800
25
1.1
-55 ... +150
150
-55 ... +150
300
300
1.3 / 10
4
0.8
0.8
V
V
V
V
mA
mA
W
W
°C
°C
°C
°C
°C
Nm/lb.
g
g
g
Characteristic Values
min. typ. max.
500
V
-2.5
-5 V
±100 nA
10 μA
250 μA
20
30 Ω
250
mA
TO-220 (IXTP)
GDS
TO-251 (IXTU)
D (TAB)
G
D
S
TO-252 (IXTY)
D (TAB)
G
S
D (TAB)
Pins: 1 - Gate 2 - Drain
3 - Source TAB - Drain
Features
z Normally ON mode
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Fast switching speed
Applications
z Level shifting
z Triggers
z Solid state relays
z Current regulators
© 2006 IXYS All rights reserved
98861A (01/06)
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