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LM3046M Просмотр технического описания (PDF) - National ->Texas Instruments

Номер в каталогеLM3046M National-Semiconductor
National ->Texas Instruments National-Semiconductor
Компоненты ОписаниеTransistor Arrays
LM3046M Datasheet PDF : 6 Pages
1 2 3 4 5 6
Absolute Maximum Ratings (TA e 25 C)
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office
Distributors for availability and specifications
LM3045
LM3046 LM3086
Each
Total
Each
Total
Units
Transistor
Package
Transistor
Package
Power Dissipation
TA e 25 C
TA e 25 C to 55 C
TA l 55 C
TA e 25 C to 75 C
TA l 75 C
300
750
300
750
Derate at 8
300
750
300
750
Derate at 6 67
mW
mW
mW C
mW
mW C
Collector to Emitter Voltage VCEO
15
15
V
Collector to Base Voltage VCBO
20
20
V
Collector to Substrate Voltage VCIO (Note 1)
20
20
V
Emitter to Base Voltage VEBO
5
5
V
Collector Current IC
50
50
mA
Operating Temperature Range
b55 C to a125 C
b40 C to a85 C
Storage Temperature Range
b65 C to a150 C
b65 C to a85 C
Soldering Information
Dual-In-Line Package Soldering (10 Sec )
260 C
260 C
Small Outline Package
Vapor Phase (60 Seconds)
215 C
Infrared (15 Seconds)
220 C
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount
devices
Electrical Characteristics (TA e 25 C unless otherwise specified)
Limits
Limits
Parameter
Conditions
LM3045 LM3046
LM3086
Units
Min Typ Max Min Typ Max
Collector to Base Breakdown Voltage (V(BR)CBO) IC e 10 mA IE e 0
20 60
20 60
V
Collector to Emitter Breakdown Voltage (V(BR)CEO) IC e 1 mA IB e 0
15 24
15 24
V
Collector to Substrate Breakdown
Voltage (V(BR)CIO)
IC e 10 mA ICI e 0
20 60
20 60
V
Emitter to Base Breakdown Voltage (V(BR)EBO)
IE 10 mA IC e 0
57
57
V
Collector Cutoff Current (ICBO)
VCB e 10V IE e 0
0 002 40
0 002 100 nA
Collector Cutoff Current (ICEO)
VCE e 10V IB e 0
05
5 mA
Static Forward Current Transfer
Ratio (Static Beta) (hFE)
VCE e 3V
IC e 10 mA
100
IC e 1 mA 40 100
IC e 10 mA
54
100
40 100
54
Input Offset Current for Matched
l l Pair Q1 and Q2 IO1 b IIO2
VCE e 3V IC e 1 mA
03 2
mA
Base to Emitter Voltage (VBE)
VCE e 3V
IE e 1 mA
IE e 10 mA
0 715
0 800
0 715
V
0 800
Magnitude of Input Offset Voltage for
l l Differential Pair VBE1 b VBE2
VCE e 3V IC e 1 mA
0 45 5
mV
Magnitude of Input Offset Voltage for Isolated
VCE e 3V IC e 1 mA
l l l l Transistors VBE3 b VBE4 VBE4 b VBE5
0 45 5
mV
l l VBE5 b VBE3
Temperature Coefficient of Base to
 J Emitter Voltage DVBE
DT
VCE e 3V IC e 1 mA
b1 9
b1 9
mV C
Collector to Emitter Saturation Voltage (VCE(SAT)) IB e 1 mA IC e 10 mA
0 23
0 23
V
Temperature Coefficient of
 J Input Offset Voltage DV10
DT
VCE e 3V IC e 1 mA
11
mV C
Note 1 The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action
2
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