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LM1042N View Datasheet(PDF) - National ->Texas Instruments

Part NameLM1042N National-Semiconductor
National ->Texas Instruments National-Semiconductor
DescriptionFluid Level Detector
LM1042N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical Characteristics
VCC e 13V TA within operating range except where stated otherwise CT e 22 mF RT e 12k (Continued)
Symbol
Parameter
Conditions
Tested Limits
(Note 2)
Min
Max
Design Limits
(Note 3)
Min
Typ
Max
Units
V1
Probe 1 Input
Voltage Range
V5
Probe 1 Open
Circuit Threshold
VCC e 9V to 18V
1
5
1
VCC e 7 5V I4 k 2 5 mA
1
(VREG e 6 0V)
5
V
35
V
At Pin 5
VREGb0 7 VREGb0 5 VREGb0 85 VREGb0 6 VREGb0 35 V
V5
Probe 1 Short
Circuit Threshold
05
07
0 35
06
0 85
V
I14
Pin 14 Input
Leakage Current
Pin 14 e 4V
b2 0
20
20
nA
I1
Pin 1 Input
Leakage Current
Pin 1 e 300 mV
b5 0
50
15
50
nA
TR
Repeat Period
CR e 22 mF (Note 5)
12
28
91
17
36
s
CR Discharge Time
CR e 22 mF
70
135
ms
CM
Memory Capacitor Value
0 47
mF
C1
Input Capacitor Value
0 47
mF
Sensitivity fo Electrostatic Discharge
Pins 7 10 13 and 14 will withstand greater than 1500V when tested using 100 pF and 1500X in accordance with National Semiconductor standard ESD test
procedures
All other pins will withstand in excess of 2 kV
Note 1 Test circuit for over voltage capability at pins 3 6 8
TL H 8709 – 2
Note 2 Guaranteed and 100% production tested at 25 C These limits are used to calculate outgoing quality levels
Note 3 Limits guardbanded to include parametric variations TA e b40 C to a80 C and from VCC e 7 5V to 18V These limits are not used to calculate AOQL
figures
Note 4 Variations over temperature range are not production tested
Note 5 Time for first repeat period see Figure 6
Note 6 Probe 1 amplifier tests are measured with pin 12 ramp voltage held between the T3 and T4 conditions (pin 12 1 1V) having previously been held above
4 1V to simulate ramp action See Figure 5
Note 7 When measuring gain separate ground wire sensing is required at pin 2 to ensure sufficiently accurate results
Linearity is defined as the difference between the predicted value of VB (VB ) and the measured value
Note 8 Above TA e 25 C derate with ijA e 70 C W
TL H 8709 – 15
For probe 1 and probe 2 Gain (G) e VCbVA
VcbVa
( Input offset e
VC
G
b
Vc
( Linearity e VB b 1 c 100%
VB
VB e VA a G(Vb b Va)
3
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