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KTA1505Y View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name
Description
Manufacturer
KTA1505Y
BILIN
Galaxy Semi-Conductor BILIN
KTA1505Y Datasheet PDF : 0 Pages
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
KTA1505
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-35
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=B 0
-30
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-35V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1 μA
DC current gain
VCE=-1V,IC=-100mA
70
400
hFE
VCE=-6V,IC=-400mA
25
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=B -10mA
-0.25 V
Transition frequency
Collector output capacitance
fT
VCE=-6V, IC= -20mA
Cob
VCB=-6V,IE=0,f=1MHz
200
MHz
13
pF
CLASSIFICATION OF hFE
Rank
O
Range
70-140
Marking
AZO
Y
120-240
AZY
G
200-400
AZG
Document number: BL/SSSTC055
Rev.A
www.galaxycn.com
2
 

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