KSE13005F View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
KSE13005F Datasheet PDF : 5 Pages
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KSE13005F
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
4
8
2
30
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
IEBO
hFE
VCE(sat)
Collector-Base Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
* Pulse test: PW≤300µs, Duty Cycle≤2%
IC = 10mA, IB = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
VCB = 10V , f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC =125V, IC = 2A
IB1 = - IB2 = 0.4A
RL = 125Ω
Min.
400
10
8
4
Typ.
65
Max.
1
60
40
0.5
0.6
1
1.2
1.6
0.8
4
0.9
Units
V
mA
V
V
V
V
V
pF
MHz
µs
µs
µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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