Typical Characteristics
5
IB = 450uA
4
IB = 400uA
IB = 350uA
IB = 300uA
IB = 250uA
3
2
1
IB = 500uA
IB = 200uA
IB = 150uA
IB = 100uA
IB = 50uA
0
0
1
2
3
4
5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
Ic = 1000 IB
Pulsed
10
VBE(sat)
1
VCE(sat)
0.1
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
160
140
120
100
80
60
40
20
sD/bISLSIIMPAITTEIODN LIMITED
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
100000
10000
VCE = 2V
Pulsed
1000
100
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
Ic(Pulse)
Ic(DC)
1
Dissipation20L0imm1s0itmeds
0.1
Tc=25oC
Single Pulse
0.01
1
10
100
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Forward Bias Safe Operating Areas
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000