KRC660E View Datasheet(PDF) - KEC
Part Name
Description
Manufacturer
KRC660E Datasheet PDF : 4 Pages
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
C
R1
B
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
Q2
E
1
2
3
KRC660E~KRC664E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
5
DIM MILLIMETERS
A
1.6 +_ 0.05
A1
1.0+_ 0.05
2
B
1.6+_ 0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. Q1 IN (BASE)
2. Q1, Q 2 COMMON (EMITTER)
3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
5. Q1 OUT (COLLECTOR)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
50
VCEO
50
VEBO
5
Collector Current
IC
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
TESV
SYMBOL RATING
PC *
200
Tj
150
Tstg
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC660E
KRC661E
Input Resistor
KRC662E
KRC663E
KRC664E
Note : * Characteristic of Transistor Only.
ICBO
IEBO
hFE
VCE(sat)
fT *
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
R1
MARK SPEC
TYPE
KRC660E
KRC661E
KRC662E
KRC663E
KRC664E
-
-
100
-
-
100
120
-
-
-
0.1
0.3
-
250
-
-
4.7
-
-
10
-
-
100
-
-
22
-
-
47
-
Marking
5
Type Name
4
MARK
NK
NM
NN
NO
NP
UNIT
nA
nA
V
MHz
k
1 23
2002. 7. 10
Revision No : 3
1/4
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