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KF13N50P/F View Datasheet(PDF) - KEC

Part Name
Description
Manufacturer
KF13N50P/F Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·VDSS= 500V, ID= 13A
·Drain-Source ON Resistance :
RDS(ON)=0.44(Max) @VGS = 10V
·Qg(typ.) = 35nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
RATING
SYMBOL
KF13N50P KF13N50F
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
500
±30
13
13*
8
8*
40
40*
860
19.5
4.5
208
49.8
1.66
0.4
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.6
2.51
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF13N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF13N50P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF13N50F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
EQUIVALENT CIRCUIT
D
TO-220IS (1)
G
S
2008. 10. 2
Revision No : 1
1/7
 

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