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KF12N60P View Datasheet(PDF) - KEC

Part Name
Description
Manufacturer
KF12N60P Datasheet PDF : 0 Pages
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·VDSS=600V, ID=12A
·Drain-Source ON Resistance :
RDS(ON)=0.6(Max) @VGS=10V
·Qg(typ.)= 36nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF12N60P KF12N60F
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
@TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Tc=25
Dissipation
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
600
±30
12
12*
7.4
7.4*
33
33*
450
17
4.5
215
49.8
1.72
0.4
150
-55150
V
V
A
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.58
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.51 /W
62.5 /W
KF12N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF12N60P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF12N60F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
EQUIVALENT CIRCUIT
D
TO-220IS (1)
G
S
2008. 10. 29
Revision No : 2
1/7
 

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