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KA1M0965RYDTU View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
KA1M0965RYDTU
Fairchild
Fairchild Semiconductor Fairchild
KA1M0965RYDTU Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KA1M0965R
Absolute Maximum Ratings
Parameter
Symbol
Drain Gate Voltage (RGS=1M)
Gate-Source (GND) Voltage
Drain Current Pulsed (2)
Single Pulsed Avalanche Energy (3)
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Maximum Supply Voltage
Input Voltage Range
VDGR
VGS
IDM
EAS
ID
ID
VCC,MAX
VFB
Total Power Dissipation
PD
Darting
Operating Ambient Temperature
Storage Temperature
TA
TSTG
Notes:
1. Tj = 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 20mH, VDD = 50V, RG = 27Ω, starting Tj = 25°C
Value
650
±30
36.0
950
9.0
5.8
30
-0.3 to VSD
170
1.33
-25 to +85
-55 to +150
Unit
V
V
ADC
mJ
ADC
ADC
V
V
W
W/°C
°C
°C
2
 

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