1617AB5
5 Watts PEP, 26 Volts, Class AB
Linear 1600 - 1700 MHz
GENERAL DESCRIPTION
The 1617AB5 is a COMMON EMITTER transistor capable of providing 5
Watts PEP of Class AB, RF output power over the band 1626- 1660 MHz.
This transistor is specifically designed for SATCOM BASE STATION
amplifier applications. It includes Input prematching and utilizes Gold
metalization and HIGH VALUE EMITTER ballasting to provide high
reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
20 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
LVceo Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
55 Volts
27 Volts
3.5 Volts
2.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
CASE OUTLINE
55CW
COMMON EMITTER
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P-1dB
Pg
IMD3
VSWR
Power Out 1 dB comp pt.
Power Gain
Intermod. distortion -3rd
Load Mismatch Tolerance
F =1660 MHz
Icq = 20 mAmpsVcc= 26V
5 W PEP, Two Tone
MIN
5
9.0
TYP
11
MAX UNITS
Watt
dB
-32
dBc
6:1
BVces
BVceo
BVebo
Ices
hFE
Cob
θjc
Collector to Emitter Breakdown
Collector to EmitterBreakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 15 mA
Ic = 15 mA
Ie = 10 mA
Vce = 26 Volts
Vce = 5 V, Ic =0.1 A
F =1 MHz, Vcb = 28 V
Tc = 25oC
55
Volts
27
Volts
3.5
Volts
5
mA
20
100
6
pF
6.0
oC/W
Issue A, February 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT
THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120