Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

60N60C2D1 Просмотр технического описания (PDF) - IXYS CORPORATION

Номер в каталогеКомпоненты Описаниепроизводитель
60N60C2D1 HiPerFAST™ IGBT ISOPLUS247™ Lightspeed 2™ Series (Electrically Isolated Back Surface) IXYS
IXYS CORPORATION IXYS
60N60C2D1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
100
90
80
70
60
50
40
30
20
10
0
0.5
Fig. 1. Output Characteristics
@ 25 Deg. C
VGE = 15V
13V
1 1V
9V
7V
5V
1
1.5
2
2.5
3
3.5
VCE - Volts
100
90
80
70
60
50
40
30
20
10
0
0.5
Fig. 3. Output Characteristics
@ 125 Deg. C
VGE = 15V
13V
1 1V
9V
7V
5V
1
1.5
2
2.5
3
3.5
VCE - Volts
5
4.5
4
3.5
3
2.5
2
1.5
1
5
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
T J = 25º C
I C = 100A
50A
25A
6 7 8 9 10 11 12 13 14 15
VGE - Volts
© 2004 IXYS All rights reserved
IXGR 60N60C2
IXGR 60N60C2D1
Fig. 2. Extended Output Characteristics
@ 25 deg. C
200
VGE = 15V
175
13V
1 1V
9V
150
125
100
75
7V
50
25
5V
0
1 1.5
2 2.5 3 3.5
4 4.5
VCE - Volts
Fig. 4. T emperature Dependence of VCE(sat)
1.2
1.1
VGE = 15V
1
I C= 100A
0.9
0.8
I C = 50A
0.7
I C = 25A
0.6
0.5
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
200
175
150
125
100
75
50
TJ = 125º C
25º C
25
-40º C
0
3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
VGE - Volts
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]