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6269CRZ Просмотр технического описания (PDF) - Intersil

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6269CRZ High-Performance Notebook PWM Controller with Bias Regulator and Audio-Frequency Clamp Intersil
Intersil Intersil
6269CRZ Datasheet PDF : 17 Pages
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Voltage applied to the VIN pin with respect to the GND pin is
regulated to +5VDC by an internal low-dropout voltage
regulator (LDO). The output of the LDO is called VCC, which
is the bias voltage used by the IC internal circuitry. The LDO
output is routed to the VCC pin and requires a ceramic
capacitor connected to the GND pin to stabilize the LDO and
to decouple load transients.
When the EN pin rises above the VENR threshold, VCC will
turn on and rise to its regulation voltage. The LDO regulates
VCC by pulling up towards the voltage at the VIN pin; the
LDO has no pull-down capability.
POR and Soft-Start
The power-on reset (POR) circuit monitors VCC for the
VCCR (rising) and VCCF (falling) voltage thresholds. The
purpose of soft-start is to limit the inrush current through the
output capacitors when the converter first turns on.The PWM
soft-start sequence initializes once VCC rises above the
VCCR threshold, beginning from below the VCCF threshold.
The ISL6269 uses a digital soft-start circuit to ramp the
output voltage of the converter to the programmed regulation
setpoint in approximately 1.5ms. The converter regulates to
600mV at the FB pin with respect to the GND pin. During
soft-start a digitally derived voltage reference forces the
converter to regulate from 0V to 600mV at the FB pin.
When the EN pin is pulled below the VENF threshold, the
LDO stops regulating and PWM immediately stops,
regardless of the falling VCC voltage. The soft-start
sequence can be reinitialized and fault latches reset, once
VCC falls below the VCCF threshold.
MOSFET Gate-Drive Outputs
The ISL6269 incorporates a MOSFET driver that controls
both high-side and low-side N-Channel MOSFETS. The
drivers are optimized for low duty-cycle applications
prevalent with large step down voltages. At low duty-cycle,
the low-side MOSFET conducts for a much longer time in a
switching period than the high-side MOSFET, necessitating
lower rDS(ON) at the expense of larger parasitic capacitance.
The low-side gate driver is therefore sized much larger to
meet this application requirement. The larger sink current
capability enables the low-side gate driver to hold the gate-
source voltage of the MOSFET below its VGSTH as current
conducts through the drain-to-gate parasitic capacitance.
Both drivers incorporate adaptive shoot-through protection
to prevent high-side and low-side MOSFETS from
conducting simultaneously and shorting the input supply.
During turn-off of the low-side MOSFET, the LG to PGND
voltage is monitored until it reaches a 1V threshold, at which
time the UG driver is allowed to switch. During turn-off of the
high-side MOSFET, the UG to PHASE voltage is monitored
until it reaches a 1V threshold, at which time the LG driver is
allowed to switch.
The input power for the LG driver circuit is sourced directly
from the PVCC pin. The input power for the UG driver circuit
is sourced from a “boot” capacitor connected from the BOOT
pin to the PHASE pin. The same supply that is connected to
the PVCC pin is used to charge the boot capacitor via the
internal Schottky diode of the IC.
August 7, 2006
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