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IRLML2803PBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRLML2803PBF
IR
International Rectifier IR
IRLML2803PBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRLML2803PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.25
––– ––– 0.40
Ω
VGS = 10V, ID = 0.91A ƒ
VGS = 4.5V, ID = 0.46A ƒ
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
0.87 ––– ––– S VDS = 10V, ID = 0.46A
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 3.3 5.0
ID = 0.91A
Qgs
Gate-to-Source Charge
––– 0.48 0.72 nC VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
––– 1.1 1.7
VGS = 10V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
––– 3.9 –––
VDD = 15V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 4.0 –––
––– 9.0 –––
ns
ID = 0.91A
RG = 6.2Ω
tf
Fall Time
––– 1.7 –––
RD = 16Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
––– 85 –––
VGS = 0V
Coss
Output Capacitance
––– 34 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 15 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 0.54
––– ––– 7.3
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.2 V TJ = 25°C, IS = 0.91A, VGS = 0V ƒ
––– 26 40 ns TJ = 25°C, IF = 0.91A
––– 22 32 nC di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD 0.91A, di/dt 120A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 5sec.
… Limited by TJmax, starting TJ = 25°C, L = 9.4mH, RG = 25Ω, IAS = 0.9A.
2
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April 24, 2014
 

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