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IRLML2803TRPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRLML2803TRPBF
IR
International Rectifier IR
IRLML2803TRPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
G1
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
S2
l RoHS Compliant, Halogen-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
A customized leadframe has been incorporated into the standard
SOT-23 package to produce a HEXFET Power MOSFET with
the industry's smallest footprint. This package, dubbed the
Micro3, is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
IRLML2803PbF
HEXFET® Power MOSFET
VDSS = 30V
3D
RDS(on) = 0.25Ω
Micro3
Base Part Number
IRLML2803TRPbF
Package Type
Micro3(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML2803TRPbF
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
TJ ,TSTG
Gate-to-Source Voltage
g Single Pulse Avalanche Energy
d Peak diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
1.2
0.93
7.3
540
4.3
±20
3.9
5.0
-55 to + 150
Units
A
mW
mW/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
f Maximum Junction-to-Ambient
Typ.
–––
Max.
230
Units
°C/W
1
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April 24, 2014
 

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