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IRL510SPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
IRL510SPBF
Vishay
Vishay Semiconductors Vishay
IRL510SPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Power MOSFET
IRL510S, SiHL510S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
100
VGS = 5 V
0.54
Qg (Max.) (nC)
6.1
Qgs (nC)
2.6
Qgd (nC)
3.3
Configuration
Single
D
D2PAK (TO-263)
GD
S
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHL510S-GE3
IRL510SPbF
SiHL510S-E3
D2PAK (TO-263)
SiHL510STRL-GE3a
IRL510STRLPbFa
SiHL510STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 5 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
LIMIT
100
± 10
5.6
4.0
18
0.29
0.025
100
5.6
4.3
43
3.7
5.5
- 55 to + 175
300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90380
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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