IRL510PBF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRL510PBF Datasheet PDF : 8 Pages
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IRL510, SiHL510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
3.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 10 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 5.0 V
ID = 3.4 Ab
VGS = 4.0 V
ID = 2.8 Ab
VDS = 50 V, ID = 3.4 Ab
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 5.0 V
ID = 5.6 A, VDS = 80 V
see fig. 6 and 13b
VDD = 50 V, ID = 5.6 A
RG = 12 Ω, RD= 8.4 Ω
see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
MIN. TYP. MAX. UNIT
100
-
-
V
-
0.12
-
V/°C
1.0
-
2.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.54
Ω
-
-
0.76
1.9
-
-
S
-
250
-
-
80
-
pF
-
15
-
-
-
6.1
-
-
2.6 nC
-
-
3.3
-
9.3
-
-
47
-
ns
-
16
-
-
18
-
-
4.5
-
nH
-
7.5
-
-
-
5.6
A
-
-
18
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.6 A, VGS = 0 Vb
-
-
2.5
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 5.6 A,
dI/dt = 100 A/µsb
-
110 130 ns
-
0.50 0.65 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91297
S-Pending-Rev. A, 31-Jan-08
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