IRL1004S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
0.0065
0.009 Ω
VGS = 10V, ID = 78A
VGS = 4.5V, ID = 65A
1.0 –––
V VDS = VGS, ID = 250µA
63 S VDS = 25V, ID = 78A
25 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 32V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 100
ID = 78A
––– ––– 32 nC VDS = 32V
––– ––– 43
VGS = 4.5V, See Fig. 6 and 13
––– 16 –––
VDD = 20V,
––– 210 –––
––– 25 –––
ID = 78A,
ns RG = 2.5Ω,
––– 14 –––
RD = 0.18Ω, See Fig. 10
––– 7.5 ––– nH Between lead,
and center of die contact
––– 5330 –––
VGS = 0V
––– 1480 ––– pF VDS = 25V
––– 320 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 130
A showing the
integral reverse
G
––– ––– 520
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0V
––– 78 120 ns TJ = 25°C, IF = 78A
––– 180 270 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.23mH
RG = 25Ω, IAS = 78A. (See Figure 12)
ISD ≤ 78A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4
Uses IRL1004 data and test conditions
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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