IRL540NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.044
VGS = 10V, ID = 18A
––– ––– 0.053 Ω VGS = 5.0V, ID = 18A
––– ––– 0.063
VGS = 4.0V, ID = 15A
1.0 ––– 2.0
14 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 18A
––– ––– 25
––– ––– 250
A VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 74
––– ––– 9.4
––– ––– 38
––– 11 –––
ID = 18A
nC VDS = 80V
VGS = 5.0V, See Fig. 6 and 13
VDD = 50V
––– 81 ––– ns ID = 18A
––– 39 –––
RG = 5.0Ω, VGS = 5.0V
––– 62 –––
RD = 2.7Ω, See Fig. 10
––– 7.5 –––
Between lead,
nH and center of die contact
––– 1800 –––
VGS = 0V
––– 350 ––– pF VDS = 25V
––– 170 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 36
A showing the
integral reverse
G
––– ––– 120
p-n junction diode.
S
––– ––– 1.3
––– 190 290
––– 1.1 1.7
V TJ = 25°C, IS = 18A, VGS = 0V
ns TJ = 25°C, IF = 18A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 1.9mH
RG = 25Ω, IAS = 18A. (See Figure 12)
ISD ≤ 18A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRL540N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.