IRL540NL View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRL540NL Datasheet PDF : 10 Pages
| |||
l Advanced Process Technology
l Surface Mount (IRL540NS)
l Low-profile through-hole (IRL540NL)
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD -91535
IRL540NS/L
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.044Ω
ID = 36A
S
D 2 Pak
T O -26 2
Max.
36
26
120
3.8
140
0.91
± 16
310
18
14
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.1
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98
|
|
Share Link: 