IRL3715Z View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRL3715Z Datasheet PDF : 12 Pages
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IRL3715Z/S/L
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
โฮVDSS/โTJ
RDS(on)
VGS(th)
โVGS(th)/โTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
20
โโโ
โโโ
โโโ
1.65
โโโ
โโโ
0.014
9.2
12.4
2.1
-5.2
โโโ
โโโ
11
15.5
2.55
โโโ
V VGS = 0V, ID = 250ยตA
V/ยฐC Reference to 25ยฐC, ID = 1mA
e mโฆ VGS = 10V, ID = 15A
e VGS = 4.5V, ID = 12A
V VDS = VGS, ID = 250ยตA
mV/ยฐC
IDSS
Drain-to-Source Leakage Current
โโโ โโโ 1.0 ยตA VDS = 16V, VGS = 0V
โโโ โโโ 150
VDS = 16V, VGS = 0V, TJ = 125ยฐC
IGSS
Gate-to-Source Forward Leakage
โโโ โโโ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
โโโ โโโ -100
VGS = -20V
gfs
Forward Transconductance
31 โโโ โโโ S VDS = 10V, ID = 12A
Qg
Total Gate Charge
โโโ 7.0 11
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
โโโ 2.1 โโโ
VDS = 10V
โโโ 0.9 โโโ nC VGS = 4.5V
โโโ 2.3 โโโ
ID = 12A
โโโ 1.7 โโโ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
โโโ 3.2 โโโ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
โโโ 3.7 โโโ nC VDS = 10V, VGS = 0V
โโโ 7.1 โโโ
e VDD = 10V, VGS = 4.5V
โโโ 44 โโโ
ID = 12A
โโโ 11 โโโ ns Clamped Inductive Load
tf
Fall Time
โโโ 4.6 โโโ
Ciss
Input Capacitance
โโโ 870 โโโ
VGS = 0V
Coss
Output Capacitance
โโโ 270 โโโ pF VDS = 10V
Crss
Reverse Transfer Capacitance
โโโ 140 โโโ
ฦ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
รย Avalanche Current
ย Repetitive Avalanche Energy
Typ.
โโโ
โโโ
โโโ
Max.
44
12
4.5
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
h Min. Typ. Max. Units
Conditions
โโโ โโโ 50
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
รย (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
A showing the
โโโ โโโ 200
integral reverse
G
โโโ โโโ 1.0
p-n junction diode.
S
e V TJ = 25ยฐC, IS = 12A, VGS = 0V
โโโ
โโโ
9.1
2.2
14
3.3
e ns TJ = 25ยฐC, IF = 12A, VDD = 10V
nC di/dt = 100A/ยตs
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