IRL3714Z/ZS/ZL
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
∆VGS(th)/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Min.
20
–––
–––
–––
1.65
–––
Typ.
–––
0.015
13
21
2.1
-5.2
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
e 16 mΩ VGS = 10V, ID = 15A
26
e VGS = 4.5V, ID = 12A
2.55 V VDS = VGS, ID = 250µA
––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs
Forward Transconductance
21 ––– ––– S VDS = 10V, ID = 14A
Qg
Total Gate Charge
––– 4.8 7.2
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
––– 1.7 –––
––– 0.80 –––
––– 1.7 –––
––– 0.60 –––
––– 2.5 –––
VDS = 10V
nC VGS = 4.5V
ID = 14A
See Fig. 16
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 2.7 ––– nC VDS = 10V, VGS = 0V
––– 6.0 –––
e VDD = 10V, VGS = 4.5V
––– 13 –––
ID = 14A
––– 10 ––– ns Clamped Inductive Load
tf
Fall Time
––– 5.0 –––
Ciss
Input Capacitance
––– 550 –––
VGS = 0V
Coss
Output Capacitance
––– 180 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 99 –––
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
à Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
23
14
3.5
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
g Min. Typ. Max. Units
Conditions
––– ––– 36
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
A showing the
––– ––– 140
integral reverse
G
––– ––– 1.0
––– 8.3 12
––– 1.5 2.3
p-n junction diode.
S
e V TJ = 25°C, IS = 14A, VGS = 0V
e ns TJ = 25°C, IF = 14A, VDD = 10V
nC di/dt = 100A/µs
2
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