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IRL3713 View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRL3713
IR
International Rectifier IR
IRL3713 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
IRL3713/S/L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min Typ
30 –––
––– 0.027
RDS(on)
Static Drain-to-Source On-Resistance
––– 2.6
––– 3.3
VGS(th)
Gate Threshold Voltage
1.0 –––
––– –––
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
Gate-to-Source Forward Leakage
––– –––
IGSS
Gate-to-Source Reverse Leakage
––– –––
Max
–––
–––
3.0
4.0
2.5
50
20
100
200
-200
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e mVGS = 10V, ID = 38A
e VGS = 4.5V, ID = 30A
V VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
Conditions
gfs
Qg
Qgs
Qgd
QOSS
RG
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
76 ––– ––– S VDS = 15V, ID = 30A
––– 75 110
ID = 30A
–––
–––
24
37
–––
–––
f nC VDS = 15V
VGS = 4.5V
61 92
VGS = 0V, VDS = 15V
0.5 ––– 3.4
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 16 –––
––– 160 –––
––– 40 –––
––– 57 –––
––– 5890 –––
––– 3130 –––
––– 630 –––
VDD = 15V
ns ID = 30A
e RG = 1.8
VGS = 4.5V
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
Typ
Max
Units
–––
1530
mJ
–––
46
A
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ùh (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min Typ Max Units
Conditions
h ––– ––– 260
A MOSFET symbol
showing the
h ––– ––– 1040
integral reverse
––– 0.80 1.3
––– 0.68 –––
V
p-n junction diode.
e TJ = 25°C, IS = 30A, VGS = 0V
e TJ = 125°C, IS = 30A, VGS = 0V
–––
–––
75
140
110
210
e ns TJ = 25°C, IF = 30A, VR = 0V
nC di/dt = 100A/µs
–––
–––
78
160
120
240
e ns TJ = 125°C, IF = 30A, VR = 20V
nC di/dt = 100A/µs
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