IRL3705NS/L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.056 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mAย
โโโ โโโ 0.010
VGS = 10V, ID = 46A ย
โโโ โโโ 0.012 โฆ VGS = 5.0V, ID = 46A ย
โโโ โโโ 0.018
VGS = 4.0V, ID = 39A ย
1.0 โโโ 2.0 V VDS = VGS, ID = 250ยตA
50 โโโ โโโ S VDS = 25V, ID = 46Aย
โโโ โโโ 25
โโโ โโโ 250
ยต A VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 100 nA VGS = 16V
โโโ โโโ -100
VGS = -16V
โโโ โโโ 98
ID = 46A
โโโ โโโ 19
โโโ โโโ 49
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13 ยย
โโโ 12 โโโ
โโโ 140 โโโ
โโโ 37 โโโ
โโโ 78 โโโ
VDD = 28V
ns ID = 46A
RG = 1.8โฆ, VGS = 5.0V
RD = 0.59โฆ, See Fig. 10 ยย
โโโ 7.5 โโโ
Between lead,
nH and center of die contact
โโโ 3600 โโโ
VGS = 0V
โโโ 870 โโโ pF VDS = 25V
โโโ 320 โโโ
ฦ = 1.0MHz, See Fig. 5ย
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 89ย
showing the
A
integral reverse
G
โโโ โโโ 310
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 46A, VGS = 0V ย
โโโ 94 140 ns TJ = 25ยฐC, IF = 46A
โโโ 290 440 nC di/dt = 100A/ยตs ยย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
ย Pulse width โค 300ยตs; duty cycle โค 2%.
max. junction temperature. ( See fig. 11 )
ย VDD = 25V, starting TJ = 25ยฐC, L = 320ยตH
RG = 25โฆ, IAS = 46A. (See Figure 12)
ย ISD โค 46A, di/dt โค 250A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย
Uses IRL3705N data and test conditions
ย Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.