IRL3705NS/L View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRL3705NS/L

HEXFET® Power MOSFET

International Rectifier 

IRL3705NS/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS

Ciss

Coss

Crss

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

55 ––– ––– V VGS = 0V, ID = 250µA

––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA…

––– ––– 0.010

VGS = 10V, ID = 46A „

––– ––– 0.012 Ω VGS = 5.0V, ID = 46A „

––– ––– 0.018

VGS = 4.0V, ID = 39A „

1.0 ––– 2.0 V VDS = VGS, ID = 250µA

50 ––– ––– S VDS = 25V, ID = 46A…

––– ––– 25

––– ––– 250

µ A VDS = 55V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 16V

––– ––– -100

VGS = -16V

––– ––– 98

ID = 46A

––– ––– 19

––– ––– 49

nC VDS = 44V

VGS = 5.0V, See Fig. 6 and 13 „…

––– 12 –––

––– 140 –––

––– 37 –––

––– 78 –––

VDD = 28V

ns ID = 46A

RG = 1.8Ω, VGS = 5.0V

RD = 0.59Ω, See Fig. 10 „…

––– 7.5 –––

Between lead,

nH and center of die contact

––– 3600 –––

VGS = 0V

––– 870 ––– pF VDS = 25V

––– 320 –––

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 89†

showing the

A

integral reverse

G

––– ––– 310

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V „

––– 94 140 ns TJ = 25°C, IF = 46A

––– 290 440 nC di/dt = 100A/µs „…

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 320µH

RG = 25Ω, IAS = 46A. (See Figure 12)

ƒ ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

… Uses IRL3705N data and test conditions

† Calculated continuous current based on maximum allowable

junction temperature; for recommended current-handling of the

package refer to Design Tip # 93-4

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

Share Link: