IRFP460N View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFP460N

HEXFET® Power MOSFET VDSS=500V Rds(on) max=0.24Ω ID=20A

International Rectifier 

100

TOP

10

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

1

0.1

0.01

0.001

0.1

5.0V

 20µs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

IRFP460N

100

TOP

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

10

5.0V

1

0.1

0.1

 20µs PULSE WIDTH

TJ = 150 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

 TJ = 150° C

10

 TJ = 25° C

1

0.1

5

 V DS = 50V

20µs PULSE WIDTH

6

7

8

9

10

11

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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3.5 ID = 20A

3.0

2.5

2.0

1.5

1.0

0.5

 VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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