IRFP26N60LPBF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRFP26N60LPBF Datasheet PDF : 8 Pages
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IRFP26N60L, SiHFP26N60L
Vishay Siliconix
1000
100
OPERATING IN THIS AREA LIMITED
BY RDS(on)
10
100 μsec
1
1 msec
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1
10
10 msec
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9a - Maximum Safe Operating Area
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 11a - Switching Time Test Circuit
30
25
20
15
10
5
0
25
50
75
100
125 150
TC, Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 11b - Switching Time Waveforms
1
0.1 D = 0.50
0.20
0.10
0.05
0.01
0.02
0.01
PDM
0.001
0.0001
1E-006
SINGLE PULSE
(THERMAL RESPONSE)
1E-005
0.0001
0.001
0.01
t , Rectangular Pulse Duration (sec)
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91218
S-81264-Rev. B, 21-Jul-08
www.vishay.com
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