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IRFP26N60L View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
IRFP26N60L
Vishay
Vishay Semiconductors Vishay
IRFP26N60L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP26N60L, SiHFP26N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.27
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 16 Ab
VDS = 50 V, ID = 16 A
600
-
-
V
-
0.33
-
V/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
µA
-
-
2.0 mA
-
0.21 0.25
Ω
13
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 0 V to 480 Vc
-
5020
-
-
450
-
-
34
-
pF
-
230
-
-
170
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 10 V
ID = 26 A, VDS = 480 V,
see fig. 7 and 15b
-
-
-
180
-
61
nC
-
85
VDD = 300 V, ID = 26 A,
RG = 4.3 Ω,VGS = 10 V
see fig. 11a and 11bb
-
31
-
-
110
-
ns
-
47
-
-
42
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
26
A
-
-
100
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
VSD
trr
Qrr
IRRM
ton
TJ = 25 °C, IS = 26 A, VGS = 0 Vb
-
-
1.5
V
TJ = 25 °C, IF = 26 A
TJ = 125 °C, dI/dt = 100 A/µsb
TJ = 25 °C, IF = 26 A, VGS = 0 Vb
TJ = 125 °C, dI/dt = 100 A/µsb
-
170 250
ns
-
210 320
-
670 1000
nC
-
1050 1570
TJ = 25 °C
-
7.3
11
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com
2
Document Number: 91218
S-81264-Rev. B, 21-Jul-08
 

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