IRFP4110PbF
Static @ TJ = 25ยฐC (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.108 โโโ V/ยฐC Reference to 25ยฐC, ID = 5mAd
โโโ 3.7 4.5 mโฆ VGS = 10V, ID = 75A g
2.0 โโโ 4.0 V VDS = VGS, ID = 250ยตA
โโโ โโโ 20 ยตA VDS = 100V, VGS = 0V
โโโ โโโ 250
VDS = 100V, VGS = 0V, TJ = 125ยฐC
โโโ โโโ 100 nA VGS = 20V
โโโ โโโ -100
VGS = -20V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
160 โโโ โโโ S VDS = 50V, ID = 75A
โโโ 150 210 nC ID = 75A
โโโ 35 โโโ
VDS = 50V
โโโ 43 โโโ
VGS = 10V g
RG
Gate Resistance
โโโ 1.3 โโโ
td(on)
Turn-On Delay Time
โโโ 25 โโโ
tr
Rise Time
โโโ 67 โโโ
td(off)
Turn-Off Delay Time
โโโ 78 โโโ
tf
Fall Time
โโโ 88 โโโ
Ciss
Input Capacitance
โโโ 9620 โโโ
Coss
Output Capacitance
โโโ 670 โโโ
Crss
Reverse Transfer Capacitance
โโโ 250 โโโ
Coss eff. (ER) Effective Output Capacitance (Energy Related)i โโโ 820 โโโ
Coss eff. (TR) Effective Output Capacitance (Time Related)h โโโ 950 โโโ
โฆ
ns VDD = 65V
ID = 75A
RG = 2.6โฆ
VGS = 10V g
pF VGS = 0V
VDS = 50V
ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 80V i
VGS = 0V, VDS = 0V to 80V h
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) di
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
โโโ โโโ 170c A MOSFET symbol
D
showing the
โโโ โโโ 670
integral reverse
G
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 75A, VGS = 0V g
โโโ 50 75 ns TJ = 25ยฐC
VR = 85V,
โโโ 60 90
TJ = 125ยฐC
IF = 75A
โโโ 94 140 nC TJ = 25ยฐC
di/dt = 100A/ยตs g
โโโ 140 210
TJ = 125ยฐC
โโโ 3.5 โโโ A TJ = 25ยฐC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Calculated continuous current based on maximum allowable junction ย ISD โค 75A, di/dt โค 630A/ยตs, VDD โค V(BR)DSS, TJ โค 175ยฐC.
temperature. Bond wire current limit is 120A. Note that current
ย
Pulse width โค 400ยตs; duty cycle โค 2%.
limitations arising from heating of the device leads may occur with ย Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
ย Repetitive rating; pulse width limited by max. junction
temperature.
ย Limited by TJmax, starting TJ = 25ยฐC, L = 0.033mH
RG = 25โฆ, IAS = 108A, VGS =10V. Part not recommended for use
above this value.
ย Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ย When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ย Rฮธ is measured at TJ approximately 90ยฐC.
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