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IRFP15N60LPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRFP15N60LPBF
IR
International Rectifier IR
IRFP15N60LPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP15N60LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.39 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
f Static Drain-to-Source On-Resistance ––– 385 460 mVGS = 10V, ID = 9.0A
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– ––– 50 µA VDS = 600V, VGS = 0V
––– ––– 2.0 mA VDS = 480V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 30V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -30V
RG
Internal Gate Resistance
––– 0.79 ––– f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
Min.
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
20
44
28
5.5
2720
260
20
120
100
Max. Units
Conditions
––– S VDS = 50V, ID = 9.0A
100
ID = 15A
30 nC VDS = 480V
46
f VGS = 10V, See Fig. 7 & 15
–––
VDD = 300V
––– ns ID = 15A
–––
RG = 1.8
–––
f VGS = 10V, See Fig. 11a & 11b
–––
VGS = 0V
–––
VDS = 25V
––– pF ƒ = 1.0MHz, See Fig. 5
–––
g VGS = 0V,VDS = 0V to 480V
–––
(Energy Related)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
320
15
28
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.44
–––
40
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 2.9mH, RG = 25,
IAS = 15A, dv/dt = 10V/ns. (See Figure 12a)
ƒ ISD 15A, di/dt 340A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
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