IRFP054N View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFP054N

HEXFET® Power MOSFET

International Rectifier 

IRFP054N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

55 ––– ––– V VGS = 0V, ID = 250µA

––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA…

––– ––– 0.012 Ω VGS = 10V, ID = 43A „

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

30 ––– ––– S VDS = 25V, ID = 43A…

––– ––– 25

––– ––– 250

µA VDS = 55V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 130

ID = 43A

––– ––– 23 nC VDS = 44V

––– ––– 53

VGS = 10V, See Fig. 6 and 13 „…

––– 11 –––

VDD = 28V

––– 66 ––– ns ID = 43A

––– 40 –––

RG = 3.6Ω

––– 46 –––

RD = 0.62Ω, See Fig. 10„…

Between lead,

D

––– 5.0 –––

6mm (0.25in.)

nH

from package

G

––– 13 –––

and center of die contact

S

––– 2900 –––

VGS = 0V

––– 880 ––– pF VDS = 25V

––– 330 –––

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

V SD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 81† A showing the

integral reverse

G

––– ––– 290

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V „

––– 81 120 ns TJ = 25°C, IF = 43A

––– 240 370 nC di/dt = 100A/µs „…

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 390µH

RG = 25Ω, IAS = 43A. (See Figure 12)

ƒ ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Uses IRF1010N data and test conditions

† Caculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the

package refer to Design Tip # 93-4

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