IRFP250 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
IRFP250 Datasheet PDF : 8 Pages
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Typical Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.4
0.3
V = 10V
GS
V = 20V
GS
0.2
0.1
※ Note : TJ = 25℃
0.0
0
30
60
90
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
8000
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
2000
Ciss
Coss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
102
101
150oC
25oC
100
10-1
2
-55oC
※ Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 40V
DS
10
V = 100V
DS
V = 160V
8
DS
6
4
2
※ Note : ID = 32 A
0
0
20
40
60
80
100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. C, November 2001
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