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IRFP250A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
IRFP250A
Fairchild
Fairchild Semiconductor Fairchild
IRFP250A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Advanced Power MOSFET
IRFP250A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 0.071 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 200 V
RDS(on) = 0.085
ID = 32 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
200
32
20.3
130
+_ 30
683
32
20.4
5.0
204
1.63
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Typ.
--
0.24
--
Max.
0.61
--
40
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
 

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