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IRF1404S View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part Name
Description
Manufacturer
IRF1404S
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
IRF1404S Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRF1404S/L
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
VDD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-channel HEXFET® Power MOSFETs
2014-8-12
7
www.kersemi.com
 

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