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IRF1503PBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRF1503PBF
IR
International Rectifier IR
IRF1503PBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
PD-95438
IRF1503PbF
AUTOMOTIVE MOSFET
Typical Applications
O 14V Automotive Electrical Systems
O 14V Electronic Power Steering
O Lead-Free
Features
O Advanced Process Technology
O Ultra Low On-Resistance
G
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this
design of HEXFET® Power MOSFETs utilizes the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 3.3m
ID = 75A
S
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value†
Avalanche Current
Repetitive Avalanche Energy…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
240
170
75
960
330
2.2
± 20
510
980
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
1
06/22/04
 

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