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IRF2804S-7PPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRF2804S-7PPBF
IR
International Rectifier IR
IRF2804S-7PPBF Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
PD - 97057A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
IRF2804S-7PPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G
S
S (Pin 2, 3 ,5,6,7)
G (Pin 1)
RDS(on) = 1.6mΩ
ID = 160A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
c Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
j Junction-to-Case
Case-to-Sink, Flat, Greased Surface
j Junction-to-Ambient
ij Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
320
230
160
1360
330
2.2
± 20
630
1050
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/22/10
 

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