IRF2805S View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF2805S

HEXFET® Power MOSFET

International Rectifier 

IRF2805S/IRF2805L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

55 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance ––– 3.9 4.7 mΩ VGS = 10V, ID = 104A T

VGS(th)

Gate Threshold Voltage

2.0 ––– 4.0 V VDS = 10V, ID = 250µA

gfs

Forward Transconductance

91 ––– ––– S VDS = 25V, ID = 104A

IDSS

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250

µA VDS = 55V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 200 nA VGS = 20V

––– ––– -200

VGS = -20V

Qg

Total Gate Charge

––– 150 230

ID = 104A

Qgs

Gate-to-Source Charge

––– 38 57 nC VDS = 44V

Qgd

Gate-to-Drain ("Miller") Charge

––– 52 78

VGS = 10VT

td(on)

Turn-On Delay Time

––– 14 –––

VDD = 28V

tr

td(off)

Rise Time

Turn-Off Delay Time

––– 120 ––– ns ID = 104A

––– 68 –––

RG = 2.5Ω

tf

Fall Time

––– 110 –––

VGS = 10V T

LD

Internal Drain Inductance

LS

Internal Source Inductance

Between lead,

D

––– 4.5 –––

6mm (0.25in.)

nH

from package

G

––– 7.5 –––

and center of die contact

S

Ciss

Input Capacitance

––– 5110 –––

VGS = 0V

Coss

Output Capacitance

––– 1190 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 210 –––

ƒ = 1.0MHz, See Fig. 5

Coss

Output Capacitance

––– 6470 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss

Output Capacitance

––– 860 –––

VGS = 0V, VDS = 44V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance U

––– 1600 –––

VGS = 0V, VDS = 0V to 44V

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) Q

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Notes:

Q Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

R Starting TJ = 25°C, L = 0.08mH

RG = 25Ω, IAS = 104A. (See Figure 12).

S ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

T Pulse width ≤ 400µs; duty cycle ≤ 2%.

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 175V

A

showing the

integral reverse

G

––– ––– 700

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0VT

––– 80 120 ns TJ = 25°C, IF = 104A

––– 290 430 nC di/dt = 100A/µsT

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

U Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

V Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

W Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

X This value determined from sample failure population. 100%

tested to this value in production.

2

www.irf.com

Share Link: