IRF1104STRL View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF1104STRL

HEXFET® Power MOSFET

International Rectifier 

IRF1104S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

40 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA…

RDS(on)

Static Drain-to-Source On-Resistance ––– ––– 0.009 Ω VGS = 10V, ID = 60A „

VGS(th)

Gate Threshold Voltage

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

37 ––– ––– S VDS = 30V, ID = 60A…

IDSS

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250

µA VDS = 40V, VGS = 0V

VDS = 32V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

Qg

Total Gate Charge

––– ––– 93

ID = 60A

Qgs

Gate-to-Source Charge

––– ––– 29 nC VDS = 32V

Qgd

Gate-to-Drain ("Miller") Charge

––– ––– 30

VGS = 10V, See Fig. 6 and 13 „…

td(on)

Turn-On Delay Time

––– 15 –––

VDD = 20V

tr

td(off)

Rise Time

Turn-Off Delay Time

––– 114 –––

––– 28 ––– ns

ID = 60A

RG = 3.6Ω

tf

Fall Time

––– 19 –––

RD = 0.33Ω, See Fig. 10 „…

LS

Internal Source Inductance

Between lead,

––– 7.5 ––– nH and center of die contact

Ciss

Input Capacitance

––– 2900 –––

VGS = 0V

Coss

Output Capacitance

––– 1100 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 250 –––

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

––– ––– 100†

A

––– ––– 400

––– ––– 1.3 V

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS =60A, VGS = 0V „

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– 74 110 ns TJ = 25°C, IF =60A

––– 188 280 nC di/dt = 100A/µs „…

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 194µH

RG = 25Ω, IAS = 60A. (See Figure 12)

… Uses IRF1104 data and test conditions.

† Calculated continuous current based on maximum allowable

ƒ ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

junction temperature;for recommended current-handling of the

package refer to Design Tip # 93-4

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

2

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