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IRF1104S View Datasheet(PDF) - International Rectifier

Part NameIRF1104S IR
International Rectifier IR
DescriptionHEXFETยฎ Power MOSFET
IRF1104S Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRF1104S/L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
40 โ€“โ€“โ€“ โ€“โ€“โ€“ V VGS = 0V, ID = 250ยตA
โˆ†V(BR)DSS/โˆ†TJ Breakdown Voltage Temp. Coefficient โ€“โ€“โ€“ 0.038 โ€“โ€“โ€“ V/ยฐC Reference to 25ยฐC, ID = 1mAย…
RDS(on)
Static Drain-to-Source On-Resistance โ€“โ€“โ€“ โ€“โ€“โ€“ 0.009 โ„ฆ VGS = 10V, ID = 60A ย„
VGS(th)
Gate Threshold Voltage
2.0 โ€“โ€“โ€“ 4.0 V VDS = VGS, ID = 250ยตA
gfs
Forward Transconductance
37 โ€“โ€“โ€“ โ€“โ€“โ€“ S VDS = 30V, ID = 60Aย…
IDSS
Drain-to-Source Leakage Current
โ€“โ€“โ€“ โ€“โ€“โ€“ 25
โ€“โ€“โ€“ โ€“โ€“โ€“ 250
ยตA VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150ยฐC
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
โ€“โ€“โ€“ โ€“โ€“โ€“ 100 nA VGS = 20V
โ€“โ€“โ€“ โ€“โ€“โ€“ -100
VGS = -20V
Qg
Total Gate Charge
โ€“โ€“โ€“ โ€“โ€“โ€“ 93
ID = 60A
Qgs
Gate-to-Source Charge
โ€“โ€“โ€“ โ€“โ€“โ€“ 29 nC VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
โ€“โ€“โ€“ โ€“โ€“โ€“ 30
VGS = 10V, See Fig. 6 and 13 ย„ย…
td(on)
Turn-On Delay Time
โ€“โ€“โ€“ 15 โ€“โ€“โ€“
VDD = 20V
tr
td(off)
Rise Time
Turn-Off Delay Time
โ€“โ€“โ€“ 114 โ€“โ€“โ€“
โ€“โ€“โ€“ 28 โ€“โ€“โ€“ ns
ID = 60A
RG = 3.6โ„ฆ
tf
Fall Time
โ€“โ€“โ€“ 19 โ€“โ€“โ€“
RD = 0.33โ„ฆ, See Fig. 10 ย„ย…
LS
Internal Source Inductance
Between lead,
โ€“โ€“โ€“ 7.5 โ€“โ€“โ€“ nH and center of die contact
Ciss
Input Capacitance
โ€“โ€“โ€“ 2900 โ€“โ€“โ€“
VGS = 0V
Coss
Output Capacitance
โ€“โ€“โ€“ 1100 โ€“โ€“โ€“ pF VDS = 25V
Crss
Reverse Transfer Capacitance
โ€“โ€“โ€“ 250 โ€“โ€“โ€“
ฦ’ = 1.0MHz, See Fig. 5ย…
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
โ€“โ€“โ€“ โ€“โ€“โ€“ 100ย†
A
โ€“โ€“โ€“ โ€“โ€“โ€“ 400
โ€“โ€“โ€“ โ€“โ€“โ€“ 1.3 V
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25ยฐC, IS =60A, VGS = 0V ย„
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
โ€“โ€“โ€“ 74 110 ns TJ = 25ยฐC, IF =60A
โ€“โ€“โ€“ 188 280 nC di/dt = 100A/ยตs ย„ย…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
ย„ Pulse width โ‰ค 300ยตs; duty cycle โ‰ค 2%.
max. junction temperature. ( See fig. 11 )
ย‚ Starting TJ = 25ยฐC, L = 194ยตH
RG = 25โ„ฆ, IAS = 60A. (See Figure 12)
ย… Uses IRF1104 data and test conditions.
ย† Calculated continuous current based on maximum allowable
ยƒ ISD โ‰ค 60A, di/dt โ‰ค 304A/ยตs, VDD โ‰ค V(BR)DSS,
TJ โ‰ค 175ยฐC
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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