IRF1503L View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF1503L Datasheet PDF : 11 Pages
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IRF1503S/IRF1503L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance ย
Min. Typ. Max. Units
Conditions
30 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.028 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mA
โโโ 2.6 3.3 mโฆ VGS = 10V, ID = 140A ย
2.0 โโโ 4.0
75 โโโ โโโ
V VDS = 10V, ID = 250ยตA
S VDS = 25V, ID = 140A
โโโ โโโ 20
โโโ โโโ 250
ยตA VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 200 nA VGS = 20V
โโโ โโโ -200
VGS = -20V
โโโ 130 200
โโโ 36 54
โโโ 41 62
โโโ 17 โโโ
ID = 140A
nC VDS = 24V
VGS = 10Vย
VDD = 15V
โโโ 130 โโโ ns ID = 140A
โโโ 59 โโโ
RG = 2.5โฆ
โโโ 48 โโโ
VGS = 10V ย
Between lead,
D
โโโ 5.0 โโโ
6mm (0.25in.)
nH
from package
G
โโโ 13 โโโ
and center of die contact
S
โโโ 5730 โโโ
VGS = 0V
โโโ 2250 โโโ pF VDS = 25V
โโโ 290 โโโ
ฦ = 1.0MHz, See Fig. 5
โโโ 7580 โโโ
โโโ 2290 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 24V, ฦ = 1.0MHz
โโโ 3420 โโโ
VGS = 0V, VDS = 0V to 24V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
ton
Notes:
Reverse RecoveryCharge
Forward Turn-On Time
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
ย Starting TJ = 25ยฐC, L = 0.049mH
RG = 25โฆ, IAS = 140A. (See Figure 12).
ย ISD โค 140A, di/dt โค 110A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย Pulse width โค 400ยตs; duty cycle โค 2%.
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 190ย
A
showing the
integral reverse
G
โโโ โโโ 960
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 140A, VGS = 0V ย
โโโ 71 110 ns TJ = 25ยฐC, IF = 140A
โโโ 110 170 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ย
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
ย Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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