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IRF1405ZS-7P View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRF1405ZS-7P HEXFETยฎ Power MOSFET IR
International Rectifier IR
IRF1405ZS-7P Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
IRF1405ZS/L-7P
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
โˆ†ฮ’VDSS/โˆ†TJ
RDS(on) SMD
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55 โ€“โ€“โ€“ โ€“โ€“โ€“
โ€“โ€“โ€“ 0.054 โ€“โ€“โ€“
โ€“โ€“โ€“ 3.7 4.9
2.0 โ€“โ€“โ€“ 4.0
V VGS = 0V, ID = 250ยตA
e V/ยฐC Reference to 25ยฐC, ID = 1mA
mโ„ฆ VGS = 10V, ID = 88A
V VDS = VGS, ID = 150ยตA
gfs
Forward Transconductance
150 โ€“โ€“โ€“ โ€“โ€“โ€“ S VDS = 25V, ID = 88A
IDSS
Drain-to-Source Leakage Current
โ€“โ€“โ€“ โ€“โ€“โ€“ 20 ยตA VDS = 55V, VGS = 0V
โ€“โ€“โ€“ โ€“โ€“โ€“ 250
VDS = 55V, VGS = 0V, TJ = 125ยฐC
IGSS
Gate-to-Source Forward Leakage
โ€“โ€“โ€“ โ€“โ€“โ€“ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
โ€“โ€“โ€“ โ€“โ€“โ€“ -200
VGS = -20V
Qg
Total Gate Charge
โ€“โ€“โ€“ 150 230 nC ID = 88A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
โ€“โ€“โ€“ 37 โ€“โ€“โ€“
โ€“โ€“โ€“ 64 โ€“โ€“โ€“
e VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
โ€“โ€“โ€“ 16 โ€“โ€“โ€“ ns VDD = 28V
tr
Rise Time
โ€“โ€“โ€“ 140 โ€“โ€“โ€“
ID = 88A
td(off)
tf
Turn-Off Delay Time
Fall Time
โ€“โ€“โ€“ 170 โ€“โ€“โ€“
โ€“โ€“โ€“ 130 โ€“โ€“โ€“
d RG = 5.0โ„ฆ
VGS = 10V
LD
Internal Drain Inductance
โ€“โ€“โ€“ 4.5 โ€“โ€“โ€“ nH Between lead,
D
LS
Internal Source Inductance
6mm (0.25in.)
โ€“โ€“โ€“ 7.5 โ€“โ€“โ€“
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
โ€“โ€“โ€“ 5360 โ€“โ€“โ€“
โ€“โ€“โ€“ 1310 โ€“โ€“โ€“
โ€“โ€“โ€“ 340 โ€“โ€“โ€“
โ€“โ€“โ€“ 6080 โ€“โ€“โ€“
โ€“โ€“โ€“ 920 โ€“โ€“โ€“
โ€“โ€“โ€“ 1700 โ€“โ€“โ€“
and center of die contact
S
pF VGS = 0V
VDS = 25V
ฦ’ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ฦ’ = 1.0MHz
VGS = 0V, VDS = 44V, ฦ’ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
รƒย™ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
โ€“โ€“โ€“ โ€“โ€“โ€“ 150
MOSFET symbol
D
A showing the
โ€“โ€“โ€“ โ€“โ€“โ€“ 590
integral reverse
G
โ€“โ€“โ€“ โ€“โ€“โ€“ 1.3
โ€“โ€“โ€“ 63 95
โ€“โ€“โ€“ 160 240
e p-n junction diode.
S
V TJ = 25ยฐC, IS = 88A, VGS = 0V
e ns TJ = 25ยฐC, IF = 88A, VDD = 28V
nC di/dt = 100A/ยตs
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
ย‚ Limited by TJmax, starting TJ = 25ยฐC,
ย… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ย† This value determined from sample failure population. 100%
L=0.064mH, RG = 25โ„ฆ, IAS = 88A, VGS =10V.
tested to this value in production.
Part not recommended for use above this value.
ยƒ Pulse width โ‰ค 1.0ms; duty cycle โ‰ค 2%.
ย‡ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
ย„ Coss eff. is a fixed capacitance that gives the same
soldering techniques refer to application note #AN-994.
charging time as Coss while VDS is rising from 0 to 80% ยˆ Rฮธ is measured at TJ of approximately 90ยฐC.
VDSS.
ย‰ Solder mounted on IMS substrate.
2
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