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IRF1405ZS-7P View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRF1405ZS-7P HEXFET® Power MOSFET IR
International Rectifier IR
IRF1405ZS-7P Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
PD - 96905B
AUTOMOTIVE MOSFET
IRF1405ZS-7P
IRF1405ZL-7P
Features
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
RDS(on) = 4.9m‰
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
D2Pak 7 Pin
ID = 120A
TO-263CA 7 Pin
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
c Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
j Junction-to-Case
Case-to-Sink, Flat, Greased Surface
j Junction-to-Ambient
ij Junction-to-Ambient (PCB Mount, steady state)
Max.
150
100
120
590
230
1.5
± 20
250
810
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
12/6/06
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