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IRF1405ZL View Datasheet(PDF) - International Rectifier

Part NameIRF1405ZL IR
International Rectifier IR
DescriptionHEXFETยฎ Power MOSFET
IRF1405ZL Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF1405Z/S/L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
โˆ†V(BR)DSS/โˆ†TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55 โ€“โ€“โ€“ โ€“โ€“โ€“
โ€“โ€“โ€“ 0.049 โ€“โ€“โ€“
โ€“โ€“โ€“ 3.7 4.9
V VGS = 0V, ID = 250ยตA
e V/ยฐC Reference to 25ยฐC, ID = 1mA
mโ„ฆ VGS = 10V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0 โ€“โ€“โ€“ 4.0 V VDS = VGS, ID = 250ยตA
gfs
Forward Transconductance
88 โ€“โ€“โ€“ โ€“โ€“โ€“ S VDS = 25V, ID = 75A
IDSS
Drain-to-Source Leakage Current
โ€“โ€“โ€“ โ€“โ€“โ€“ 20 ยตA VDS = 55V, VGS = 0V
โ€“โ€“โ€“ โ€“โ€“โ€“ 250
VDS = 55V, VGS = 0V, TJ = 125ยฐC
IGSS
Gate-to-Source Forward Leakage
โ€“โ€“โ€“ โ€“โ€“โ€“ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
โ€“โ€“โ€“ โ€“โ€“โ€“ -200
VGS = -20V
Qg
Total Gate Charge
โ€“โ€“โ€“ 120 180
ID = 75A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
โ€“โ€“โ€“
โ€“โ€“โ€“
31
46
โ€“โ€“โ€“
โ€“โ€“โ€“
e nC VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
โ€“โ€“โ€“ 18 โ€“โ€“โ€“
VDD = 25V
tr
Rise Time
โ€“โ€“โ€“ 110 โ€“โ€“โ€“
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
โ€“โ€“โ€“
โ€“โ€“โ€“
48
82
โ€“โ€“โ€“
โ€“โ€“โ€“
e ns RG = 4.4โ„ฆ
VGS = 10V
LD
Internal Drain Inductance
โ€“โ€“โ€“ 4.5 โ€“โ€“โ€“
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
โ€“โ€“โ€“ 7.5 โ€“โ€“โ€“
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
โ€“โ€“โ€“ 4780 โ€“โ€“โ€“
โ€“โ€“โ€“ 770 โ€“โ€“โ€“
โ€“โ€“โ€“ 410 โ€“โ€“โ€“
โ€“โ€“โ€“ 2730 โ€“โ€“โ€“
โ€“โ€“โ€“ 600 โ€“โ€“โ€“
โ€“โ€“โ€“ 910 โ€“โ€“โ€“
and center of die contact
S
VGS = 0V
VDS = 25V
pF ฦ’ = 1.0MHz
VGS = 0V, VDS = 1.0V, ฦ’ = 1.0MHz
f VGS = 0V, VDS = 44V, ฦ’ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
โ€“โ€“โ€“ โ€“โ€“โ€“ 75
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
รƒย™ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
โ€“โ€“โ€“ โ€“โ€“โ€“ 600
integral reverse
G
โ€“โ€“โ€“ โ€“โ€“โ€“ 1.3
โ€“โ€“โ€“ 30 46
โ€“โ€“โ€“ 30 45
e p-n junction diode.
S
V TJ = 25ยฐC, IS = 75A, VGS = 0V
e ns TJ = 25ยฐC, IF = 75A, VDD = 25V
nC di/dt = 100A/ยตs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
ย‚ Limited by TJmax, starting TJ = 25ยฐC, L = 0.10mH
ย… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
ย† This value determined from sample failure population.
RG = 25โ„ฆ, IAS = 75A, VGS =10V. Part not
100% tested to this value in production.
recommended for use above this value.
ยƒ Pulse width โ‰ค 1.0ms; duty cycle โ‰ค 2%.
ย„ Coss eff. is a fixed capacitance that gives the same
ย‡ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
charging time as Coss while VDS is rising from 0 to 80%
VDSS .
2
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