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IRF1010Z View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRF1010Z HEXFET® Power MOSFET IR
International Rectifier IR
IRF1010Z Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF1010ZS/L
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
-
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
-
D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
8
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