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IRF1010Z View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRF1010Z HEXFET® Power MOSFET IR
International Rectifier IR
IRF1010Z Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF1010ZS/L
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
1
0.1
4.5V 20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
0.1
4.5V 20µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
4.0
VDS = 25V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0 11.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
100
TJ = 175°C
80
60
TJ = 25°C
40
20
0
0
VDS = 10V
20µs PULSE WIDTH
20
40
60
80
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
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