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IRF1010Z View Datasheet(PDF) - International Rectifier

Part NameIRF1010Z IR
International Rectifier IR
DescriptionHEXFETยฎ Power MOSFET
IRF1010Z Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF1010ZS/L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
โˆ†V(BR)DSS/โˆ†TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55 โ€“โ€“โ€“ โ€“โ€“โ€“
โ€“โ€“โ€“ 0.049 โ€“โ€“โ€“
โ€“โ€“โ€“ 5.8 7.5
2.0 โ€“โ€“โ€“ 4.0
V VGS = 0V, ID = 250ยตA
e V/ยฐC Reference to 25ยฐC, ID = 1mA
mโ„ฆ VGS = 10V, ID = 75A
V VDS = VGS, ID = 250ยตA
gfs
Forward Transconductance
33 โ€“โ€“โ€“ โ€“โ€“โ€“ S VDS = 25V, ID = 75A
IDSS
Drain-to-Source Leakage Current
โ€“โ€“โ€“ โ€“โ€“โ€“ 20 ยตA VDS = 55V, VGS = 0V
โ€“โ€“โ€“ โ€“โ€“โ€“ 250
VDS = 55V, VGS = 0V, TJ = 125ยฐC
IGSS
Gate-to-Source Forward Leakage
โ€“โ€“โ€“ โ€“โ€“โ€“ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
โ€“โ€“โ€“ โ€“โ€“โ€“ -200
VGS = -20V
Qg
Total Gate Charge
โ€“โ€“โ€“ 63 95
ID = 75A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
โ€“โ€“โ€“
โ€“โ€“โ€“
19
24
โ€“โ€“โ€“
โ€“โ€“โ€“
e nC VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
โ€“โ€“โ€“ 18 โ€“โ€“โ€“
VDD = 28V
tr
Rise Time
โ€“โ€“โ€“ 150 โ€“โ€“โ€“
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
โ€“โ€“โ€“
โ€“โ€“โ€“
36
92
โ€“โ€“โ€“
โ€“โ€“โ€“
e ns RG = 6.8 โ„ฆ
VGS = 10V
LD
Internal Drain Inductance
โ€“โ€“โ€“ 4.5 โ€“โ€“โ€“
Between lead,
LS
Internal Source Inductance
nH 6mm (0.25in.)
โ€“โ€“โ€“ 7.5 โ€“โ€“โ€“
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
โ€“โ€“โ€“ 2840 โ€“โ€“โ€“
โ€“โ€“โ€“ 420 โ€“โ€“โ€“
โ€“โ€“โ€“ 250 โ€“โ€“โ€“
โ€“โ€“โ€“ 1630 โ€“โ€“โ€“
โ€“โ€“โ€“ 360 โ€“โ€“โ€“
โ€“โ€“โ€“ 560 โ€“โ€“โ€“
and center of die contact
VGS = 0V
VDS = 25V
pF ฦ’ = 1.0MHz
VGS = 0V, VDS = 1.0V, ฦ’ = 1.0MHz
f VGS = 0V, VDS = 44V, ฦ’ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
โ€“โ€“โ€“ โ€“โ€“โ€“ 75
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
รƒย™ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
โ€“โ€“โ€“ โ€“โ€“โ€“ 360
A showing the
integral reverse
โ€“โ€“โ€“ โ€“โ€“โ€“ 1.3
โ€“โ€“โ€“ 22 33
โ€“โ€“โ€“ 15 23
e p-n junction diode.
V TJ = 25ยฐC, IS = 75A, VGS = 0V
e ns TJ = 25ยฐC, IF = 75A, VDD = 25V
nC di/dt = 100A/ยตs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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