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IRF1010Z View Datasheet(PDF) - International Rectifier

Part NameIRF1010Z IR
International Rectifier IR
DescriptionHEXFET® Power MOSFET
IRF1010Z Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PD - 94652A
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
TO-220AB
IRF1010Z
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h EAS (Tested ) Single Pulse Avalanche Energy Tested Value
Ù IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
www.irf.com
IRF1010Z
IRF1010ZS
IRF1010ZL
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 7.5m
ID = 75A
S
D2Pak
IRF1010ZS
TO-262
IRF1010ZL
Max.
94
66
75
360
140
0.90
± 20
130
180
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
1
9/8/03
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