IRF1010EZ View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF1010EZ Datasheet PDF : 12 Pages
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IRF1010EZ/S/L
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
1
Ciss
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12.0
10.0
ID= 51A
8.0
VDS= 48V
VDS= 30V
VDS= 12V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
10.00 TJ = 175°C
1.00
TJ = 25°C
VGS = 0V
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
10
1 Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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