IRF1010EZS View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF1010EZS

HEXFET® Power MOSFET

International Rectifier 

IRF1010EZ/S/L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

Drain-to-Source Breakdown Voltage 60 ––– –––

Breakdown Voltage Temp. Coefficient ––– 0.058 –––

Static Drain-to-Source On-Resistance ––– 6.8 8.5

Gate Threshold Voltage

2.0 ––– 4.0

V

V/°C

mΩ

V

VGS = 0V, ID = 250µA

f Reference to 25°C, ID = 1mA

VGS = 10V, ID = 51A

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

200 ––– ––– S VDS = 25V, ID = 51A

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 60V, VGS = 0V

––– ––– 250

VDS = 60V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -20V

Qg

Total Gate Charge

––– 58 86 nC ID = 51A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

––– 19 28

––– 21 32

f VDS = 48V

VGS = 10V

td(on)

Turn-On Delay Time

––– 19 ––– ns VDD = 30V

tr

Rise Time

––– 90 –––

ID = 51A

td(off)

tf

Turn-Off Delay Time

Fall Time

––– 38 –––

––– 54 –––

f RG = 7.95Ω

VGS = 10V

LD

Internal Drain Inductance

––– 4.5 ––– nH Between lead,

D

6mm (0.25in.)

LS

Internal Source Inductance

––– 7.5 –––

from package

G

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

––– 2810 –––

––– 420 –––

––– 200 –––

––– 1440 –––

––– 320 –––

––– 510 –––

and center of die contact

S

pF VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 48V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 48V

Diode Characteristics

Parameter

IS

Continuous Source Current

Min. Typ. Max. Units

Conditions

––– ––– 84

MOSFET symbol

D

(Body Diode)

A showing the

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

––– ––– 340

––– ––– 1.3

integral reverse

G

f p-n junction diode.

S

V TJ = 25°C, IS = 51A, VGS = 0V

trr

Qrr

Reverse Recovery Time

Reverse Recovery Charge

––– 41

––– 54

62

81

f ns TJ = 25°C, IF = 51A, VDD = 30V

nC di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

… Coss eff. is a fixed capacitance that gives the same charging time

max. junction temperature. (See fig. 11).

as Coss while VDS is rising from 0 to 80% VDSS .

‚ Limited by TJmax, starting TJ = 25°C, L = 0.077mH, † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

RG = 25Ω, IAS = 51A, VGS =10V. Part not

avalanche performance.

recommended for use above this value.

ƒ ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C.

„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

‡ This value determined from sample failure population. 100%

tested to this value in production.

ˆ This is applied to D2Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and

soldering techniques refer to application note #AN-994.

2

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